69 citations · 220 across the 10 of their papers we have counts for
10 papers
Anomalous Platinum and Oxygen Transport during Electroforming of NbOx Memristors
Shimul Kanti Nath, Sanjoy Kumar Nandi, Xiao Sun +9
Electroforming of metal-oxide-metal memristors is generally attributed to the creation of oxygen-vacancy filaments within the oxide, with noble metal electrodes such as Pt and Au r…
High-Mobility Indium Native Oxide Transistors via Liquid-Metal Printing in Air
Shi-Rui Zhang, Sanjoy Kumar Nandi, Felipe Kremer +8
Oxide semiconductors have emerged as common channel materials in transistors and hold promise for next-generation electronics, yet achieving high mobility typically requires costly…
Liquid Metal-Exfoliated SnO-Based Mixed-dimensional Heterostructures for Visible-to-Near-Infrared Photodetection
Shimul Kanti Nath, Nitu Syed, Wenwu Pan +13
Ultra-thin two-dimensional (2D) materials have gained significant attention for making next-generation optoelectronic devices. Here, we report a large-area heterojunction photodete…
Tuning superconductivity in nanosecond laser annealed boron doped epilayers
S. Nath, I. Turan, L. Desvignes +8
Superconductivity in ultra-doped epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the so…
Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbOx
Shimul Kanti Nath, Sanjoy Kumar Nandi, Shuai Li +1
Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particula…
Schottky barrier induced asymmetry in the negative differential resistance response of Nb/NbOx/Pt cross-point devices
Shimul Kanti Nath, Sanjoy Kumar Nandi, Assaad El-Helou +5
The negative differential resistance (NDR) response of Nb/NbOx/Pt cross-point devices is shown to have a polarity dependence due to the effect of the metal/oxide Schottky barriers…