Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization

H. Bohuslavskyi, S. Barraud, V. Barral +14

Extensive electrical characterization of ring oscillators (ROs) made in high-$\kappa$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of…