42 citations · 115 across the 6 of their papers we have counts for
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Hydride Vapor-Phase Epitaxy Reactor for Bulk GaN Growth
Vladislav Voronenkov, Natalia Bochkareva, Andrey Zubrilov +4
An HVPE reactor for the growth of bulk GaN crystals with a diameter of 50 mm was developed. Growth rate non-uniformity of 1% was achieved using an axisymmetric vertical gas injecto…
Laser slicing: a thin film lift-off method for GaN-on-GaN technology
Vladislav Voronenkov, Natalia Bochkareva, Ruslan Gorbunov +6
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off…
Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer
Vladislav Voronenkov, Andrey Leonidov, Natalia Bochkareva +6
A free-standing bulk gallium nitride layer with a thickness of 365 m and a diameter of 50 mm was obtained by hydride vapor phase epitaxy on a sapphire substrate with a carbon bu…