42 citations · 127 across the 7 of their papers we have counts for
7 papers
Guiding principles for the design of a chemical vapor deposition process for highly crystalline transition metal dichalcogenides
Vladislav Voronenkov, Benjamin Groven, Henry Medina Silva +2
Two-dimensional transition metal dichalcogenides (TMDs) for advanced logic transistor technologies are deposited by various modifications of the chemical vapor deposition (CVD) met…
Hydride Vapor-Phase Epitaxy Reactor for Bulk GaN Growth
Vladislav Voronenkov, Natalia Bochkareva, Andrey Zubrilov +4
An HVPE reactor for the growth of bulk GaN crystals with a diameter of 50 mm was developed. Growth rate non-uniformity of 1% was achieved using an axisymmetric vertical gas injecto…
Laser slicing: a thin film lift-off method for GaN-on-GaN technology
Vladislav Voronenkov, Natalia Bochkareva, Ruslan Gorbunov +6
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off…
Thick GaN film stress-induced self-separation
Vladislav Voronenkov, Andrey Leonidov, Yuri Lelikov +2
Cracking of thick GaN films on sapphire substrates during the cooling down after the growth was studied. The cracking was suppressed by increasing the film-to-substrate thickness r…
Two modes of HVPE growth of GaN and related macrodefects
V. V. Voronenkov, N. I. Bochkareva, R. I. Gorbunov +9
GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mo…
Nature of V-Shaped Defects in GaN
Vladislav Voronenkov, Natalia Bochkareva, Ruslan Gorbunov +6
GaN films with thicknesses up to 3 mm were grown in two custom-made halide vapor phase epitaxy (HVPE) reactors. V-shaped defects (pits) with densities from 1 cm to 100 cm$^{…