R. Goldhahn

activity

20202025

most citedStructural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

33 citations · 99 across the 9 of their papers we have counts for

collaborators

Showing 2021Show all

2 papers · 1 filter

cond-mat.mtrl-sci2021★ 8 cited

Molecular beam epitaxy of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films ( $x \leq 0.18$ ): Structural properties and consequences of compositional inhomogeneity

Alexandra Papadogianni, Charlotte Wouters, Robert Schewski +9

In this work, we show the heteroepitaxial growth of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films on (111)-oriented yttria-stabilized zirconia substrates using plas…

cond-mat.mtrl-sci2021★ 5 cited

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga) $_{2}$ O $_{3}$ alloy films

Johannes Feldl, Martin Feneberg, Alexandra Papadogianni +5

The influence of Ga incorporation into cubic In $_{2}$ O $_{3}$ on the electronic and vibrational properties is discussed for (In $_{1 - x}$ ,Ga $_{x}$ ) $_{2}$ O $_{3}$ alloy films grown by molecular b…

Molecular beam epitaxy of single-crystalline bixbyite (In1−x​Gax​)2​O3​ films (x≤0.18): Structural properties and consequences of compositional inhomogeneity

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)2​O3​ alloy films

Molecular beam epitaxy of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films ( $x \leq 0.18$ ): Structural properties and consequences of compositional inhomogeneity

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga) $_{2}$ O $_{3}$ alloy films