R. Goldhahn

most citedStructural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

33 citations · 54 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2022

Tackling Disorder in $γ$ -Ga $_{2}$ O $_{3}$

Laura E. Ratcliff, Takayoshi Oshima, Felix Nippert +19

Ga $_{2}$ O $_{3}$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga $_{2}$ O $_{3}$ offers potential for electronic struc…

cond-mat.mtrl-sci2022★ 21 cited

Delocalization of dark and bright excitons in flat-band materials and the optical properties of V $_{2}$ O $_{5}$

Vitaly Gorelov, Lucia Reining, Martin Feneberg +4

The simplest picture of excitons in materials with atomic-like localization of electrons is that of Frenkel excitons, where electrons and holes stay close together, which is associ…

physics.app-ph2020★ 33 cited

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

Melanie Budde, Carsten Tschammer, Philipp Franz +7

NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth wi…

Tackling Disorder in γ-Ga2​O3​

Delocalization of dark and bright excitons in flat-band materials and the optical properties of V2​O5​

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

Tackling Disorder in $γ$ -Ga $_{2}$ O $_{3}$

Delocalization of dark and bright excitons in flat-band materials and the optical properties of V $_{2}$ O $_{5}$