R. Goldhahn

activity

20202025

most citedStructural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

33 citations · 99 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2025★ 8 cited

Band gaps and phonons of quasi-bulk rocksalt ScN

J. Grümbel, Y. Oshima, A. Dubroka +3

ScN is an emerging transition metal nitride with unique physical properties arising from the d-electrons of Sc. In this work we present the results of optical characterization tech…

cond-mat.mtrl-sci2023★ 15 cited

In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge

Wenshan Chen, Kingsley Egbo, Hans Tornatzky +3

Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To exp…

cond-mat.mtrl-sci2022★ 6 cited

Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy

Kingsley Egbo, Esperanza Luna, Jonas Lähnemann +7

By employing a mixed SnO $_{2}$ +Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1…

cond-mat.mtrl-sci2022★ 3 cited

Femtosecond pump-probe absorption edge spectroscopy of cubic GaN

Elias Baron, Rüdiger Goldhahn, Shirly Espinoza +6

Time-dependent femtosecond pump-probe spectroscopic ellipsometry studies on zincblende gallium-nitride (zb-GaN) are performed and analyzed between 2.9-3.7eV. An ultra-fast change o…

cond-mat.mtrl-sci2022

Tackling Disorder in $γ$ -Ga $_{2}$ O $_{3}$

Laura E. Ratcliff, Takayoshi Oshima, Felix Nippert +19

Ga $_{2}$ O $_{3}$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga $_{2}$ O $_{3}$ offers potential for electronic struc…

cond-mat.mtrl-sci2022★ 21 cited

Delocalization of dark and bright excitons in flat-band materials and the optical properties of V $_{2}$ O $_{5}$

Vitaly Gorelov, Lucia Reining, Martin Feneberg +4

The simplest picture of excitons in materials with atomic-like localization of electrons is that of Frenkel excitons, where electrons and holes stay close together, which is associ…

cond-mat.mtrl-sci2021★ 8 cited

Molecular beam epitaxy of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films ( $x \leq 0.18$ ): Structural properties and consequences of compositional inhomogeneity

Alexandra Papadogianni, Charlotte Wouters, Robert Schewski +9

In this work, we show the heteroepitaxial growth of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films on (111)-oriented yttria-stabilized zirconia substrates using plas…

cond-mat.mtrl-sci2021★ 5 cited

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga) $_{2}$ O $_{3}$ alloy films

Johannes Feldl, Martin Feneberg, Alexandra Papadogianni +5

The influence of Ga incorporation into cubic In $_{2}$ O $_{3}$ on the electronic and vibrational properties is discussed for (In $_{1 - x}$ ,Ga $_{x}$ ) $_{2}$ O $_{3}$ alloy films grown by molecular b…

physics.app-ph2020★ 33 cited

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

Melanie Budde, Carsten Tschammer, Philipp Franz +7

NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth wi…

Band gaps and phonons of quasi-bulk rocksalt ScN

In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge

Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy

Femtosecond pump-probe absorption edge spectroscopy of cubic GaN

Tackling Disorder in γ-Ga2​O3​

Delocalization of dark and bright excitons in flat-band materials and the optical properties of V2​O5​

Molecular beam epitaxy of single-crystalline bixbyite (In1−x​Gax​)2​O3​ films (x≤0.18): Structural properties and consequences of compositional inhomogeneity

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)2​O3​ alloy films

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

Tackling Disorder in $γ$ -Ga $_{2}$ O $_{3}$

Delocalization of dark and bright excitons in flat-band materials and the optical properties of V $_{2}$ O $_{5}$

Molecular beam epitaxy of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films ( $x \leq 0.18$ ): Structural properties and consequences of compositional inhomogeneity

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga) $_{2}$ O $_{3}$ alloy films