Local removal of silicon layers on Si(100)-2x1 with chlorine-resist STM lithography

T. V. Pavlova, V. M. Shevlyuga, B. V. Andryushechkin +2

We report the realization of STM-based lithography with silicon layers removal on the chlorinated Si(100)-2x1 surface at 77 K. In contrast to other STM lithography studies, we were…