activity
20192025
most citedA back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights

112 citations · 208 across the 9 of their papers we have counts for

collaborators

9 papers

cs.ET2025

Energy-convergence trade off for the training of neural networks on bio-inspired hardware

Nikhil Garg, Paul Uriarte Vicandi, Yanming Zhang +5

The increasing deployment of wearable sensors and implantable devices is shifting AI processing demands to the extreme edge, necessitating ultra-low power for continuous operation.…

cs.ET2025★ 14 cited

All-in-One Analog AI Hardware: On-Chip Training and Inference with Conductive-Metal-Oxide/HfOx ReRAM Devices

Donato Francesco Falcone, Victoria Clerico, Wooseok Choi +9

Analog in-memory computing is an emerging paradigm designed to efficiently accelerate deep neural network workloads. Recent advancements have focused on either inference or trainin…

cs.NE2024

TEXEL: A neuromorphic processor with on-chip learning for beyond-CMOS device integration

Hugh Greatorex, Ole Richter, Michele Mastella +10

Recent advances in memory technologies, devices and materials have shown great potential for integration into neuromorphic electronic systems. However, a significant gap remains be…

cs.AR2023★ 8 cited

High-Conductance, Ohmic-like HfZrO Ferroelectric Memristor

Laura Bégon-Lours, Mattia Halter, Youri Popoff +3

The persistent and switchable polarization of ferroelectric materials based on HfO-based ferroelectric compounds, compatible with large-scale integration, are attractive synapt…

cs.AR2023★ 7 cited

A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda +6

A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO layer is fabricated at a low thermal budget (~375C), enabling BEOL processes…

cs.AR2023★ 8 cited

A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory

Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda +6

A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS i…

cs.ET2020★ 112 cited

A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights

Mattia Halter, Laura Bégon-Lours, Valeria Bragaglia +5

Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck o…

cond-mat.mtrl-sci2019★ 50 cited

Stabilization of phase-pure rhombohedral HfZrO4 in Pulsed Laser Deposited thin films

Laura Bégon-Lours, Martijn Mulder, Pavan Nukala +6

Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric material…

cond-mat.mtrl-sci2019★ 9 cited

Factors limiting ferroelectric field-effect doping in complex-oxide heterostructures

L. Bégon-Lours, V. Rouco, Qiao Qiao +12

Ferroelectric field-effect doping has emerged as a powerful approach to manipulate the ground state of correlated oxides, opening the door to a new class of field-effect devices. H…