D. Nam

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20192021

most citedMonolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors

169 citations · 281 across the 6 of their papers we have counts for

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physics.app-ph2021★ 169 cited

Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors

Oussama Moutanabbir, Simone Assali, Xiao Gong +9

(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant th…

physics.app-ph2019

Band structure of strained Ge $_{1 - x}$ Sn $_{x}$ alloy: a full-zone 30-band $k \cdot p$ model

Zhigang Song, Weijun Fan, Chuan Seng Tan +4

We extend the previous 30-band $k$ $\cdot$ $p$ model effectively employed for relaxed Ge $_{1 - x}$ Sn $_{x}$ alloy to the case of strained Ge $_{1 - x}$ Sn $_{x}$ alloy. The strain-relevant p…

physics.app-ph2019

Band structure of Ge $_{1 - x}$ Sn $_{x}$ alloy: a full-zone 30-band $k$ $\cdot$ $p$ model

Zhigang Song, Weijun Fan, Chuanseng Tan +4

A full-zone 30-band $k$ $\cdot$ $p$ model is developed as an efficient and reliable tool to compute electronic band structure in Ge $_{1 - x}$ Sn $_{x}$ alloy. The model was first used to…

Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors

Band structure of strained Ge1−x​Snx​ alloy: a full-zone 30-band k⋅p model

Band structure of Ge1−x​Snx​alloy: a full-zone 30-band k⋅p model

Band structure of strained Ge $_{1 - x}$ Sn $_{x}$ alloy: a full-zone 30-band $k \cdot p$ model

Band structure of Ge $_{1 - x}$ Sn $_{x}$ alloy: a full-zone 30-band $k$ $\cdot$ $p$ model