Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model

Zhigang Song; Weijun Fan; Chuan Seng Tan; Qijie Wang; Donguk Nam; Dao Hua Zhang; Greg Sun

doi:10.1088/1367-2630/ab306f

paper

Band structure of strained Ge $_{1 - x}$ Sn $_{x}$ alloy: a full-zone 30-band $k \cdot p$ model

arXiv:1908.02958 · doi:10.1088/1367-2630/ab306f

Abstract

We extend the previous 30-band $k$ $\cdot$ $p$ model effectively employed for relaxed Ge $_{1 - x}$ Sn $_{x}$ alloy to the case of strained Ge $_{1 - x}$ Sn $_{x}$ alloy. The strain-relevant parameters for the 30-band $k$ $\cdot$ $p$ model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from literatures and optimizations. We specially investigate the dependence of band-gap at $L$ -valley and $Γ$ -valley with different Sn composition under uniaxial and biaxial strain along [100], [110] and [111] directions. The good agreement between our theoretical predictions and experimental data validates the effectiveness of our model. Our 30-band $k$ $\cdot$ $p$ model and relevant input parameters successfully applied to relaxed and strained Ge $_{1 - x}$ Sn $_{x}$ alloy offers a powerful tool for the optimization of sophisticated devices made from such alloy.

8-pages, 6 figures

Band structure of strained Ge1−x​Snx​ alloy: a full-zone 30-band k⋅p model

Abstract

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Band structure of strained Ge $_{1 - x}$ Sn $_{x}$ alloy: a full-zone 30-band $k \cdot p$ model