150 citations · 294 across the 6 of their papers we have counts for
6 papers
1D photonic crystal direct bandgap GeSn-on-insulator laser
Hyo-Jun Joo, Youngmin Kim, Daniel Burt +12
GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all G…
Strain effects on Phase-Filling Singularities in Highly Doped n-Type Ge
Zhigang Song, Wei-Jun Fan, C. S. Tan +4
Recently, Chi Xu et al. predicted the phase-filling singularities (PFS) in the optical dielectric function (ODF) of the highly doped -type Ge and confirmed in experiment the PFS…
The theoretical direct-band-gap optical gain of Germanium nanowires
Wen Xiong, Jian-Wei Wang, Wei-Jun Fan +2
We calculate the electronic structures of Germanium nanowires by taking the effective-mass theory. The electron and hole states at the G-valley are studied via the eight-band k.p t…
Band structure of strained GeSn alloy: a full-zone 30-band model
Zhigang Song, Weijun Fan, Chuan Seng Tan +4
We extend the previous 30-band model effectively employed for relaxed GeSn alloy to the case of strained GeSn alloy. The strain-relevant p…
Band structure of GeSnalloy: a full-zone 30-band model
Zhigang Song, Weijun Fan, Chuanseng Tan +4
A full-zone 30-band model is developed as an efficient and reliable tool to compute electronic band structure in GeSn alloy. The model was first used to…
Low-threshold optically pumped lasing in highly strained Ge nanowires
Shuyu Bao, Daeik Kim, Chibuzo Onwukaeme +11
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several…