Epitaxial Sc${}_x$Al${}_{1-x}$N on GaN is a High K Dielectric

Joseph Casamento, Hyunjea Lee, Takuya Maeda +7

Epitaxial Sc${}_x$Al${}_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity (${\epsilon }_r$) values relative to AlN.…