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cond-mat.mes-hall2025
Atomically resolved electron reflectivity at a metal/semiconductor interface
Ding-Ming Huang, Jian-Huan Wang, Jie-Yin Zhang +3
An atomically flat interface is achieved between face-centered cubic Al and diamond lattice Ge via molecular beam epitaxy (MBE). Based on the measurements of scanning tunneling mic…
cond-mat.mes-hall2025★ 4 cited
Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy
Jian-Huan Wang, Ming Ming, Ding-Ming Huang +7
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier…