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Enhancing charge stability of Ge quantum well heterostructures via SiGe layer composition engineering
Ding-Ming Huang, Jun-Hang Liu, Han Gao +10
Composition modulation is a powerful technique for designing materials with tailored properties, fueling the development of advanced semiconductor devices. In this work, we have im…
Atomically resolved electron reflectivity at a metal/semiconductor interface
Ding-Ming Huang, Jian-Huan Wang, Jie-Yin Zhang +3
An atomically flat interface is achieved between face-centered cubic Al and diamond lattice Ge via molecular beam epitaxy (MBE). Based on the measurements of scanning tunneling mic…
Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy
Jian-Huan Wang, Ming Ming, Ding-Ming Huang +7
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier…
Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices
Fei Gao, Jian-Huan Wang, Hannes Watzinger +13
Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nano…