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20152020
most citedRoom-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region

20 citations · 29 across the 4 of their papers we have counts for

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cond-mat.mtrl-sci2015

Excitation Mechanisms of Er Optical Centers in GaN Epilayers

D. K. George, M. Hawkins, M. McLaren +4

We report direct evidence of two mechanisms responsible for the excitation of optically active Er3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition. These me…