9 citations · 9 across the 1 of their papers we have counts for
2 papers
physics.app-ph2020★ 9 cited
Observation of Optical Gain in Er-Doped GaN Epilayers
V. X. Ho, Y. Wang, B. Ryan +4
Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emi…
physics.app-ph2018
Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region
V. X. Ho, T. M. Al tahtamouni, H. X. Jiang +3
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconduct…