20 citations · 29 across the 4 of their papers we have counts for
4 papers
Observation of Optical Gain in Er-Doped GaN Epilayers
V. X. Ho, Y. Wang, B. Ryan +4
Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emi…
Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region
V. X. Ho, T. M. Al tahtamouni, H. X. Jiang +3
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconduct…
Photoluminescence quantum efficiency of Er optical centers in GaN epilayers
V. X. Ho, T. V. Dao, H. X. Jiang +4
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical…
Excitation Mechanisms of Er Optical Centers in GaN Epilayers
D. K. George, M. Hawkins, M. McLaren +4
We report direct evidence of two mechanisms responsible for the excitation of optically active Er3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition. These me…