activity
20162025
most citedMonte Carlo Ray-Trace Diffraction Based On the Huygens-Fresnel Principle

22 citations · 77 across the 6 of their papers we have counts for

collaborators

6 papers

physics.optics2025★ 5 cited

High-Efficiency Multilevel Phase Lenses with Nanostructures on Polyimide Membranes

Leslie Howe, Tharindu D. Rajapaksha, Kalani H. Ellepola +7

The emergence of planar meta-lenses on flexible materials has profoundly impacted the long-standing perception of diffractive optics. Despite their advantages, these lenses still f…

cond-mat.mtrl-sci2021★ 21 cited

Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors

Yifei Wang, Vinh X. Ho, Zachary. N. Henschel +2

We report the 1/f noise characteristics at low-frequency in graphene field-effect transistors that utilized a high-k dielectric tantalum oxide encapsulated layer (a few nanometers…

physics.app-ph2020★ 9 cited

Observation of Optical Gain in Er-Doped GaN Epilayers

V. X. Ho, Y. Wang, B. Ryan +4

Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emi…

physics.app-ph2018★ 20 cited

Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region

V. X. Ho, T. M. Al tahtamouni, H. X. Jiang +3

Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconduct…

physics.optics2018★ 22 cited

Monte Carlo Ray-Trace Diffraction Based On the Huygens-Fresnel Principle

J. R. Mahan, N. Q. Vinh, V. X. Ho +1

The goal of this effort is to establish the conditions and limits under which the Huygens-Fresnel principle accurately describes diffraction in the Monte Carlo ray-trace environmen…

cond-mat.mtrl-sci2016

Photoluminescence quantum efficiency of Er optical centers in GaN epilayers

V. X. Ho, T. V. Dao, H. X. Jiang +4

We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical…