58 citations · 202 across the 9 of their papers we have counts for
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cond-mat.mes-hall2019★ 2 cited
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing
L. Persichetti, M. Fanfoni, B. Bonanni +5
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(0…
cond-mat.mtrl-sci2019★ 13 cited
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
L. Persichetti, L. Di Gaspare, F. Fabbri +7
By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition…