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cond-mat.mes-hall2020★ 33 cited
A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect
D. Logoteta, M. G. Pala, J. Choukroun +2
We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energ…
cond-mat.mes-hall2018★ 26 cited
High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions
Jean Choukroun, Marco Pala, Shiang Fang +2
In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's function…