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cond-mat.mtrl-sci2020
Epitaxial growth of SiC on (100) Diamond
A. Tsai, A. Aghajamali, N. Dontschuk +11
We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch ex…
cond-mat.mtrl-sci2018
Microscopic imaging of elastic deformation in diamond via in-situ stress tensor sensors
D. A. Broadway, B. C. Johnson, M. S. J. Barson +12
The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, whic…
cond-mat.mtrl-sci2018
Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors
D. A. Broadway, N. Dontschuk, A. Tsai +8
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precisi…