5 citations · 10 across the 6 of their papers we have counts for
3 papers · 1 filter
Spontaneous Nanopatterning and Strain Relaxation in SiGe Layers Grown by Oxidative Solid Phase Epitaxy
Sophie E. Bierer, Trevor R. Smith, Arezoo Mafi +5
The wafer-scale monolithic integration of III-V materials on Si would lead to revolutionary optoelectronic hardware for data, computing and other applications. However, heteroepita…
Ultra-thin strain-relieving SiGe layers enabling III-V epitaxy on Si
Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel +4
The explosion of artificial intelligence, possible end of Moore's law, dawn of quantum computing and continued exponential growth of data communications traffic have brought new ur…
Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency
Miriam Oliva, Timur Flissikowski, Michał Góra +7
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential f…