5 citations · 10 across the 6 of their papers we have counts for
6 papers
Spontaneous Nanopatterning and Strain Relaxation in SiGe Layers Grown by Oxidative Solid Phase Epitaxy
Sophie E. Bierer, Trevor R. Smith, Arezoo Mafi +5
The wafer-scale monolithic integration of III-V materials on Si would lead to revolutionary optoelectronic hardware for data, computing and other applications. However, heteroepita…
Electron Microscopy Study of Core-Shell Nanowire Bending and Twisting
Spencer McDermott, Trevor R. Smith, Ryan B. Lewis
The spontaneous bending of core-shell nanowires through asymmetric shell deposition has implications for sensors, enabling both parallel fabrication and creating advantageous out-o…
Ultra-thin strain-relieving SiGe layers enabling III-V epitaxy on Si
Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel +4
The explosion of artificial intelligence, possible end of Moore's law, dawn of quantum computing and continued exponential growth of data communications traffic have brought new ur…
Phosphorus-Controlled Nanoepitaxy in the Asymmetric Growth of GaAs-InP Core-Shell Bent Nanowires
Spencer McDermott, Trevor R. Smith, Ray R. LaPierre +1
Breakthroughs extending nanostructure engineering beyond what is possible with current fabrication techniques will be crucial for enabling next-generation nanotechnologies. Nanoepi…
Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency
Miriam Oliva, Timur Flissikowski, Michał Góra +7
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential f…
Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry
Ali AlHassan, Jonas Lähnemann, Steven Leake +9
We report on the direct correlation between the structural and optical properties of single, as-grown core-multi-shell GaAs/InGaAs/GaAs/AlAs/GaAs nanowires. Fabri…