12 citations · 25 across the 4 of their papers we have counts for
4 papers
Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2
Baichen Lin, Shanquan Chen, Yubo Zhang +18
Metal-insulator transitions (MITs) in correlated oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is oft…
Large Enhancement of Properties in Strained Lead-free Multiferroic Solid Solutions with Strong Deviation from Vegard's Law
Tao Wang, Mingjie Zou, Dehe Zhang +18
Efforts to combine the advantages of multiple systems to enhance functionlities through solid solution design present a great challenge due to the constraint imposed by the classic…
Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping
Chao Zhou, Liyang Ma, Yanpeng Feng +13
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polariza…
Molecular beam epitaxy preparation and in situ characterization of FeTe thin films
V. M. Pereira, C. N. Wu, C. E. Liu +8
We have synthesized FeTe thin films by means of molecular beam epitaxy (MBE) under Te-limited growth conditions. We found that epitaxial layer-by-layer growth is possible f…