Molecular beam epitaxy preparation and in situ characterization of FeTe thin films
arXiv:2002.09507 · doi:10.1103/PhysRevMaterials.4.023405
Abstract
We have synthesized FeTe thin films by means of molecular beam epitaxy (MBE) under Te-limited growth conditions. We found that epitaxial layer-by-layer growth is possible for a wide range of excess Fe values, wider than expected from what is known on the bulk material. Using x-ray magnetic circular dichroism spectroscopy at the Fe L and Te M edges, we observed that films with high excess Fe contain ferromagnetic clusters while films with lower excess Fe remain nonmagnetic. Moreover, x-ray absorption spectroscopy showed that it is possible to obtain films with very similar electronic structure as that of a high quality bulk single crystal FeTe. Our results suggest that MBE with Te-limited growth may provide an opportunity to synthesize FeTe films with smaller amounts of excess Fe as to come closer to a possible superconducting phase.
arXiv comment6 pages, 6 figures accepted for publication in Physical Review Materials
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