activity
20202026
most citedTSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing

22 citations · 26 across the 7 of their papers we have counts for

collaborators

7 papers

physics.optics2026

Machine Learning-Driven Design of Mixed-Pitch Grating Couplers for Co-Packaged Optics Applications

Yu Dian Lim, Yun Da Chua, Wai Cheung Ma +2

A mixed-pitch grating coupler which can couple a wide range of wavelengths is preferred in its application in co-packaged optics (CPO). However, the design and optimization of such…

physics.optics2025

AI-Designed Photonics Gratings with Experimental Verification

Yu Dian Lim, Chuan Seng Tan

Artificial Intelligence (AI) software based on transformer model is developed to automatically design gratings for possible integrations in ion traps to perform optical addressing…

physics.optics2025

Physics-informed Transformer Model for the Design of Wavelength-filtering Ring Resonator

Yu Dian Lim, Feng Shuo Wan, Ren Jie Wan +1

We have developed a physics-informed transformer model to suggest design parameters in wavelength-filtering ring resonator, that suit a given pair of resonant wavelengths with <6 n…

eess.IV2024

Real-time Detection and Auto focusing of Beam Profiles from Silicon Photonics Gratings using YOLO model

Yu Dian Lim, Hong Yu Li, Simon Chun Kiat Goh +3

When observing the chip-to-free-space light beams from silicon photonics (SiPh) to free-space, manual adjustment of camera lens is often required to obtain a focused image of the l…

physics.optics2024

Recognizing Beam Profiles from Silicon Photonics Gratings using Transformer Model

Yu Dian Lim, Hong Yu Li, Simon Chun Kiat Goh +3

Over the past decade, there has been extensive work in developing integrated silicon photonics (SiPh) gratings for the optical addressing of trapped ion qubits in the ion trap quan…

physics.atom-ph2021★ 22 cited

TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing

P. Zhao, J. -P. Likforman, H. Y. Li +6

In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion…