24 citations · 49 across the 7 of their papers we have counts for
10 papers
Quasicrystalline oxide interfaces by twisting SrTiO3 membranes
Shivasheesh Varshney, Sooho Choo, Huan Liu +34
Quasicrystals reveal that long-range order can exist without translational periodicity, but deterministic routes for designing strongly bonded quasicrystalline interfaces remain un…
Pushing the Dose Limit of Atomic-Resolution Imaging: A 4D-STEM case study of NaCl
Tamazouzt Chennit, Arno Annys, Songge Li +3
Beam-induced damage fundamentally limits the characterization of beam-sensitive materials by scanning transmission electron microscopy (STEM), since structural information must be…
Designing dislocation-driven polar vortex networks in twisted perovskites
William Sandholt, Nicolas Gauquelin, John Mangeri +21
Twisting two atomic layers produces a geometric moire pattern, but bonding-induced interfacial reconstruction fundamentally transforms this into an ordered dislocation network - a…
Interfacial Control of Orbital Occupancy and Spin State in LaCoO
Ellen M. Kiens, Nicolas Gauquelin, Arno Annys +11
Transition metal oxides exhibit a wide range of tunable electronic properties arising from the complex interplay of charge, spin, and lattice degrees of freedom, governed by their…
Improving the low-dose performance of aberration correction in single sideband ptychography
Songge Li, Nicolas Gauquelin, Hoelen L. Lalandec Robert +5
The single sideband (SSB) framework of analytical electron ptychography can account for the presence of residual geometrical aberrations induced by the probe-forming lens. However,…
Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces
N. Lebedev, M. Stehno, A. Rana +4
We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, Transmission El…
Gate-tuned Anomalous Hall Effect Driven by Rashba Splitting in Intermixed LaAlO3/GdTiO3/SrTiO3
N. Lebedev, M. Stehno, A. Rana +6
The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interfac…
Full control of Co valence in isopolar LaCoO3 / LaTiO3 perovskite heterostructures via interfacial engineering
Georgios Araizi-Kanoutas, Jaap Geessinck, Nicolas Gauquelin +11
We report charge-transfer up to a single electron per interfacial unit cell across non-polar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3…
Tailoring Vanadium Dioxide Film Orientation using Nanosheets: A Combined Microscopy, Diffraction, Transport and Soft X-ray in Transmission Study
Phu Tran Phong Le, Kevin Hofhuis, Abhi Rana +17
VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheet…
Unconventional exchange bias coupling at perovskite/brownmillerite interface in spontaneously stabilized SrCoO3-δ/SrCoO2.5 bi-layer
B. C. Behera, Subhadip Jana, Shwetha G. Bhat +3
Interface effect in complex oxide thin film heterostructures lies at the vanguard of current research to design technologically relevant functionality and explore emergent physical…