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20202024
most citedStopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5

3 citations · 3 across the 4 of their papers we have counts for

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physics.app-ph2020

Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress

Raihan Sayeed Khan, A. Hasan Talukder, Faruk Dirisaglik +2

We observed resistance drift in 125 K - 300 K temperature range in melt quenched amorphous Ge2Sb2Te5 line-cells with length x width x thickness = ~500 nm x ~100 nm x ~ 50 nm. Drift…