3 citations · 3 across the 3 of their papers we have counts for
3 papers
Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5
Md Tashfiq Bin Kashem, Raihan Sayeed Khan, ABM Hasan Talukder +2
We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop w…
Temperature Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs
A. B. M. Hasan Talukder, Brittany Smith, Mustafa Akbulut +3
Narrow-channel accumulated body nMOSFET devices with p-type side-gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate…
Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress
Raihan Sayeed Khan, A. Hasan Talukder, Faruk Dirisaglik +2
We observed resistance drift in 125 K - 300 K temperature range in melt quenched amorphous Ge2Sb2Te5 line-cells with length x width x thickness = ~500 nm x ~100 nm x ~ 50 nm. Drift…