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20202024
most citedStopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5

3 citations · 3 across the 4 of their papers we have counts for

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physics.app-ph2024

Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation

A. Talukder, M. Kashem, M. Hafiz +4

We electrically characterized melt-quenched amorphized Ge2Sb2Te5 (GST) phase-change memory cells of 20 nm thickness, ~66-124 nm width and ~100-600 nm length with and without photoe…