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20192022
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cond-mat.mtrl-sci2022

Ge-GeSn core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication

Sudarshan Singh, Subhrajit Mukherjee, Samik Mukherjee +5

Recent development on GeSn nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at…

cond-mat.mtrl-sci2020

Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn

Jérôme Nicolas, Simone Assali, Samik Mukherjee +2

Controlling the growth kinetics from the vapor phase has been a powerful paradigm enabling a variety of metastable epitaxial semiconductors such as Sn-containing group IV semicondu…

cond-mat.mtrl-sci2020

Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering

T. Grange, S. Mukherjee, G. Capellini +8

We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploi…

cond-mat.mtrl-sci2019

3-D Atomic Mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices

Samik Mukherjee, Anis Attiaoui, Matthias Bauer +1

The interfacial abruptness and uniformity in heterostructures are critical to control their electronic and optical properties. With this perspective, this work demonstrates the 3-D…