50 citations · 168 across the 10 of their papers we have counts for
11 papers
Wafer-Scale Growth of Sb2Te3 Films via Low-Temperature ALD for Self-Powered Photodetector
Jun Yang, Jianzhu Li, Amin Bahrami +5
In this work, we demonstrate the performance of a silicon-compatible high-performance self-powered photodetector.A wide detection range from visible (405 nm) to near-infrared (1550…
Localized Energy States Induced by Atomic-Level Interfacial Broadening in Heterostructures
Anis Attiaoui, Gabriel Fettu, Samik Mukherjee +2
A theoretical framework incorporating atomic-level interfacial details is derived to include the electronic structure of buried interfaces and describe the behavior of charge carri…
Ge-GeSn core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication
Sudarshan Singh, Subhrajit Mukherjee, Samik Mukherjee +5
Recent development on GeSn nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at…
A Light-Hole Quantum Well on Silicon
Simone Assali, Anis Attiaoui, Patrick Del Vecchio +3
The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to th…
Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects
Samik Mukherjee, Simone Assali, Oussama Moutanabbir
This work unravels the atomic details of the interaction of solute atoms with nanoscale crystalline defects. The complexity of this phenomenon is elucidated through detailed atom p…
Disentangling Phonon Channels in Nanoscale Thermal Transport
Samik Mukherjee, Marcin Wajs, Maria de la Mata +5
Phonon surface scattering has been at the core of heat transport engineering in nanoscale structures and devices. Herein, we demonstrate that this phonon pathway can be the sole me…
Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn
Jérôme Nicolas, Simone Assali, Samik Mukherjee +2
Controlling the growth kinetics from the vapor phase has been a powerful paradigm enabling a variety of metastable epitaxial semiconductors such as Sn-containing group IV semicondu…
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells
Luca Persichetti, Michele Montanari, Chiara Ciano +9
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based TH…
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
T. Grange, S. Mukherjee, G. Capellini +8
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploi…
3-D Atomic Mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices
Samik Mukherjee, Anis Attiaoui, Matthias Bauer +1
The interfacial abruptness and uniformity in heterostructures are critical to control their electronic and optical properties. With this perspective, this work demonstrates the 3-D…
Atomic Order in Non-Equilibrium Silicon-Germanium-Tin Semiconductors
S. Mukherjee, N. Kodali, D. Isheim +5
The precise knowledge of the atomic order in monocrystalline alloys is fundamental to understand and predict their physical properties. With this perspective, we utilized laser-ass…