169 citations · 651 across the 36 of their papers we have counts for
9 papers · 1 filter
Recrystallization and Interdiffusion Processes in Laser-Annealed Strain-Relaxed Metastable GeSn0
Salim Abdi, Simone Assali, Mahmoud R. M. Atalla +3
The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings new challenges related to the metastability of this class of materials. As a matter of fa…
High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response
M. R. M. Atalla, S. Assali, S. Koelling +2
The availability of high-frequency pulsed emitters in the m wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fibe…
Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires
Lu Luo, Simone Assali, Mahmoud R. M. Atalla +6
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we e…
1D photonic crystal direct bandgap GeSn-on-insulator laser
Hyo-Jun Joo, Youngmin Kim, Daniel Burt +12
GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all G…
Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects
Samik Mukherjee, Simone Assali, Oussama Moutanabbir
This work unravels the atomic details of the interaction of solute atoms with nanoscale crystalline defects. The complexity of this phenomenon is elucidated through detailed atom p…
Enhanced GeSn Microdisk Lasers Directly Released on Si
Youngmin Kim, Simone Assali, Daniel Burt +6
GeSn alloys are promising candidates for complementary metal-oxide-semiconductor (CMOS)-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has…
Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics
Simone Assali, Anis Attiaoui, Sebastian Koelling +6
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the stru…
Combined Iodine- and Sulfur-based Treatments for an Effective Passivation of GeSn Surface
Léonor Groell, Anis Attiaoui, Simone Assali +1
GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated short-wave and mid-wave infrared photonic and sensing platforms. Exploit…
Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors
Oussama Moutanabbir, Simone Assali, Xiao Gong +9
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant th…