169 citations · 651 across the 36 of their papers we have counts for
4 papers · 1 filter
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires
Simone Assali, Roberto Bergamaschini, Emilio Scalise +8
The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the e…
Strain engineering in Ge/GeSn core/shell nanowires
Simone Assali, Marco Albani, Roberto Bergamaschini +6
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain…
Vacancy complexes in nonequilibrium germanium-tin semiconductors
Simone Assali, Mohamed Elsayed, Jérôme Nicolas +5
Understanding the nature and behavior of vacancy-like defects in epitaxial GeSn metastable alloys is crucial to elucidate the structural and optoelectronic properties of these emer…
Decoupling the effects of composition and strain on the vibrational modes of GeSn
Étienne Bouthillier, Simone Assali, Jérôme Nicolas +1
We report on the behavior of Ge-Ge, Ge-Sn, Sn-Sn like and disorder-activated vibrational modes in GeSn semiconductors investigated using Raman scattering spectroscopy. By using an…