Xinge Yang

most citedCoherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide

83 citations · 83 across the 3 of their papers we have counts for

collaborators

Showing cond-mat.mes-hallShow all

2 papers · 1 filter

cond-mat.mes-hall2020

Number Parity effect in the normal state of $S r T i O_{3}$

Xing Yang, Quanhui Liu, Boldizsár Jankó

We study the recently discovered even-odd effects in the normal state of single-electron devices manufactured at strontium titanium oxide/lanthanum aluminum oxide interfaces (STO/L…

cond-mat.mes-hall2020★ 83 cited

Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide

Zhao Mu, S. A. Zargaleh, H. J. von Bardeleben +7

Silicon carbide (SiC) has become a key player in realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. H…

Number Parity effect in the normal state of SrTiO3​

Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide

Number Parity effect in the normal state of $S r T i O_{3}$