1 citations · 2 across the 9 of their papers we have counts for
10 papers · 1 filter
Analysis of the Mobility-Limiting Mechanisms of the Two-Dimensional Hole Gas on Hydrogen-Terminated Diamond
Ricardo Peterson, Mohamadali Malakoutian, Xiaoqing Xu +3
Here we present an analysis of the mobility-limiting mechanisms of a two-dimensional hole gas on hydrogen-terminated diamond surfaces. The scattering rates of surface impurities, s…
Molybdenum Trioxide Gates for Suppression of Leakage Current in InAlN/GaN HEMTs at 300°C
Caitlin A. Chapin, Savannah R. Benbrook, Chloe Leblanc +1
Because high electron mobility transistors (HEMTs) often exhibit significant gate leakage during high-temperature operation, the choice of Schottky metal is critical. Increased gat…
A Laterally Vibrating Lithium Niobate MEMS Resonator Array Operating at 500°C in Air
Savannah R. Benbrook, Caitlin A. Chapin, Ruochen Lu +3
This paper is the first report of the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO) MEMS resonator array up to 500°C in air.…
Effect of Proton Irradiation Temperature on Zinc Oxide Metal-Semiconductor-Metal Ultraviolet Photodetectors
Thomas Heuser, Caitlin Chapin, Max Holliday +2
The electrical and structural characteristics of 50 nm zinc oxide (ZnO) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors subjected to proton irradiation at different…
Stable Operation of AlGaN/GaN HEMTs at 400C in air for 25 hours
Saleh Kargarrazi, Ananth Saran Yalamarthy, Peter F. Satterthwaite +3
In this letter, we report the operation of AlGaN/GaN HEMTs with Pd gates in air over a wide temperature range from 22C to 500C. The variation in the threshold volta…
Modeling of Radiation-Induced Defect Recovery in 3C-SiC Under High Field Bias Conditions
Ricardo Peterson, Debbie Senesky
In this work, the implications of high field bias conditions in radiation-induced defect recovery in 3C-SiC crystals is studied. It is well known that transient heating effects (or…