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20182023
most citedAnalysis of the Mobility-Limiting Mechanisms of the Two-Dimensional Hole Gas on Hydrogen-Terminated Diamond

41 citations · 117 across the 17 of their papers we have counts for

collaborators

18 papers

physics.ins-det2023★ 1 cited

Effect of geometry on the frequency limit of GaAs/AlGaAs 2-Dimensional Electron Gas (2DEG) Hall effect sensors

Anand Lalwani, Miriam Giparakis, Kanika Arora +6

In this work, we experimentally investigate the frequency limit of Hall effect sensor designs based on a 2 dimensional electron gas (2DEG) gallium arsenide/aluminum gallium arsenid…

physics.app-ph2023

Thermal conductivity of macroporous graphene aerogel measured using high resolution comparative infrared thermal microscopy

Jasmine M. Cox, Jessica J. Frick, Chen Liu +5

Graphene aerogel (GA) is a promising material for thermal management applications across many fields due to its lightweight and thermally insulative properties. However, standard v…

physics.app-ph2021★ 9 cited

Electron Beam Irradiation of Gallium Nitride-on-Silicon Betavoltaics Fabricated with a Triple Mesa Etch

T. Heuser, M. Braun, D. G. Senesky

A process for growing gallium nitride (GaN) vertical p-i-n homojunctions on (111) silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD) was developed, and a…

cond-mat.mtrl-sci2021

Effects of Proton Irradiation on Hole Carrier Transport in Hydrogen-Terminated Diamond Surfaces

Ricardo Peterson, Mohamadali Malakoutian, Yongqiang Wang +2

In this letter, we report the effects of irradiating hydrogen-terminated diamond surfaces with protons. We study the electrical behavior of the two-dimensional hole gas that forms…

physics.app-ph2020★ 41 cited

Analysis of the Mobility-Limiting Mechanisms of the Two-Dimensional Hole Gas on Hydrogen-Terminated Diamond

Ricardo Peterson, Mohamadali Malakoutian, Xiaoqing Xu +3

Here we present an analysis of the mobility-limiting mechanisms of a two-dimensional hole gas on hydrogen-terminated diamond surfaces. The scattering rates of surface impurities, s…

physics.app-ph2019

Molybdenum Trioxide Gates for Suppression of Leakage Current in InAlN/GaN HEMTs at 300°C

Caitlin A. Chapin, Savannah R. Benbrook, Chloe Leblanc +1

Because high electron mobility transistors (HEMTs) often exhibit significant gate leakage during high-temperature operation, the choice of Schottky metal is critical. Increased gat…