activity
20182020
most citedEffect of Proton Irradiation Temperature on Zinc Oxide Metal-Semiconductor-Metal Ultraviolet Photodetectors

1 citations · 1 across the 7 of their papers we have counts for

collaborators

9 papers

physics.app-ph2020

Analysis of the Mobility-Limiting Mechanisms of the Two-Dimensional Hole Gas on Hydrogen-Terminated Diamond

Ricardo Peterson, Mohamadali Malakoutian, Xiaoqing Xu +3

Here we present an analysis of the mobility-limiting mechanisms of a two-dimensional hole gas on hydrogen-terminated diamond surfaces. The scattering rates of surface impurities, s…

physics.app-ph2019

Molybdenum Trioxide Gates for Suppression of Leakage Current in InAlN/GaN HEMTs at 300°C

Caitlin A. Chapin, Savannah R. Benbrook, Chloe Leblanc +1

Because high electron mobility transistors (HEMTs) often exhibit significant gate leakage during high-temperature operation, the choice of Schottky metal is critical. Increased gat…

physics.app-ph20191 cited

Effect of Proton Irradiation Temperature on Zinc Oxide Metal-Semiconductor-Metal Ultraviolet Photodetectors

Thomas Heuser, Caitlin Chapin, Max Holliday +2

The electrical and structural characteristics of 50 nm zinc oxide (ZnO) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors subjected to proton irradiation at different…

physics.ins-det2019

Temperature Dependence of Sensitivity of 2DEG-Based Hall-Effect Sensors

Hannah S. Alpert, Caitlin A. Chapin, Karen M. Dowling +4

The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576°C. Both devices showed decreasing vol…

physics.app-ph2019

Stable Operation of AlGaN/GaN HEMTs at 400C in air for 25 hours

Saleh Kargarrazi, Ananth Saran Yalamarthy, Peter F. Satterthwaite +3

In this letter, we report the operation of AlGaN/GaN HEMTs with Pd gates in air over a wide temperature range from 22C to 500C. The variation in the threshold volta…

physics.ins-det2019

Gallium Nitride Photodetector Measurements of UV Emission from a Gaseous CH4/O2 Hybrid Rocket Igniter Plume

Hannah S. Alpert, Ananth Saran Yalamarthy, Peter F. Satterthwaite +6

Owing to its wide (3.4 eV) and direct-tunable band gap, gallium nitride (GaN) is an excellent material platform for UV photodetectors. GaN is also stable in radiation-rich and high…