41 citations · 77 across the 6 of their papers we have counts for
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Molybdenum Trioxide Gates for Suppression of Leakage Current in InAlN/GaN HEMTs at 300°C
Caitlin A. Chapin, Savannah R. Benbrook, Chloe Leblanc +1
Because high electron mobility transistors (HEMTs) often exhibit significant gate leakage during high-temperature operation, the choice of Schottky metal is critical. Increased gat…
Effect of Proton Irradiation Temperature on Zinc Oxide Metal-Semiconductor-Metal Ultraviolet Photodetectors
Thomas Heuser, Caitlin Chapin, Max Holliday +2
The electrical and structural characteristics of 50 nm zinc oxide (ZnO) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors subjected to proton irradiation at different…
Temperature Dependence of Sensitivity of 2DEG-Based Hall-Effect Sensors
Hannah S. Alpert, Caitlin A. Chapin, Karen M. Dowling +4
The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576°C. Both devices showed decreasing vol…
Stable Operation of AlGaN/GaN HEMTs at 400C in air for 25 hours
Saleh Kargarrazi, Ananth Saran Yalamarthy, Peter F. Satterthwaite +3
In this letter, we report the operation of AlGaN/GaN HEMTs with Pd gates in air over a wide temperature range from 22C to 500C. The variation in the threshold volta…