1 citations · 1 across the 4 of their papers we have counts for
6 papers
Analysis of the Mobility-Limiting Mechanisms of the Two-Dimensional Hole Gas on Hydrogen-Terminated Diamond
Ricardo Peterson, Mohamadali Malakoutian, Xiaoqing Xu +3
Here we present an analysis of the mobility-limiting mechanisms of a two-dimensional hole gas on hydrogen-terminated diamond surfaces. The scattering rates of surface impurities, s…
Molybdenum Trioxide Gates for Suppression of Leakage Current in InAlN/GaN HEMTs at 300°C
Caitlin A. Chapin, Savannah R. Benbrook, Chloe Leblanc +1
Because high electron mobility transistors (HEMTs) often exhibit significant gate leakage during high-temperature operation, the choice of Schottky metal is critical. Increased gat…
Effect of Proton Irradiation Temperature on Zinc Oxide Metal-Semiconductor-Metal Ultraviolet Photodetectors
Thomas Heuser, Caitlin Chapin, Max Holliday +2
The electrical and structural characteristics of 50 nm zinc oxide (ZnO) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors subjected to proton irradiation at different…
Temperature Dependence of Sensitivity of 2DEG-Based Hall-Effect Sensors
Hannah S. Alpert, Caitlin A. Chapin, Karen M. Dowling +4
The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576°C. Both devices showed decreasing vol…
Stable Operation of AlGaN/GaN HEMTs at 400C in air for 25 hours
Saleh Kargarrazi, Ananth Saran Yalamarthy, Peter F. Satterthwaite +3
In this letter, we report the operation of AlGaN/GaN HEMTs with Pd gates in air over a wide temperature range from 22C to 500C. The variation in the threshold volta…
Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-effect Sensors
Hannah S. Alpert, Karen M. Dowling, Caitlin A. Chapin +5
The current- and voltage-scaled sensitivities and signal-to-noise ratios (SNR) (with respect to thermal noise) of various octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were…