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Xiaoqing Xu

3 papers hereh-index 13643 citations39 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author2

Across the 2 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall1
  • cond-mat.mtrl-sci1
  • physics.app-ph1
same name
  • Xiaoqing Xu — 6 papers, h 18
  • Xiaoqing Xu — 3 papers, h 5
  • Xiaoqing Xu — 2 papers, h 1
  • Xiaoqing Xu — 1 paper, h 1
  • Xiaoqing Xu — 1 paper, h 2
  • Xiaoqing Xu — 1 paper, h 3

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedTemperature Dependent Thermal Boundary Conductance of Monolayer MoS2​ by Raman Thermometry

178 citations · 219 across the 2 of their papers we have counts for

collaborators

3 papers

physics.app-ph2020★ 41 cited

Analysis of the Mobility-Limiting Mechanisms of the Two-Dimensional Hole Gas on Hydrogen-Terminated Diamond

Ricardo Peterson, Mohamadali Malakoutian, Xiaoqing Xu +3

Here we present an analysis of the mobility-limiting mechanisms of a two-dimensional hole gas on hydrogen-terminated diamond surfaces. The scattering rates of surface impurities, s…

cond-mat.mes-hall2017★ 178 cited

Temperature Dependent Thermal Boundary Conductance of Monolayer MoS2​ by Raman Thermometry

Eilam Yalon, Özgür Burak Aslan, Kirby K. H. Smithe +9

The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-d…

cond-mat.mtrl-sci2017

Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering

Ananth Saran Yalamarthy, Hongyun So, Miguel Muñoz Rojo +4

Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency e…

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