133 citations · 634 across the 22 of their papers we have counts for
6 papers · 1 filter
First Production of New Thin 3D Sensors for HL-LHC at FBK
DMS Sultan, Gian-Franco Dalla Betta, Roberto Mendicino +3
Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades…
The INFN-FBK Phase-2 R{\&}D Program
Gian-Franco Dalla Betta, Maurizio Boscardin, Marco Bomben +12
We report on the 3-year INFN ATLAS-CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Lum…
Development of a new generation of 3D pixel sensors for HL-LHC
Gian-Franco Dalla Betta, Maurizio Boscardin, Giovanni Darbo +6
This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminos…
Development of New 3D Pixel Sensors for Phase 2 Upgrades at LHC
Gian-Franco Dalla Betta, Maurizio Boscardin, Roberto Mendicino +3
We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g…
Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations
F. Moscatelli, D. Passeri, A. Morozzi +3
In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed…
Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors
F. Moscatelli, P. Maccagnani, D. Passeri +7
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulati…