178 citations · 546 across the 8 of their papers we have counts for
4 papers · 1 filter
Large-scale BN tunnel barriers for graphene spintronics
Wangyang Fu, Péter Makk, Romain Maurand +2
We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier ma…
Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications
W. Fu, M. El Abbassi, T. Hasler +8
We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for…
Graphene transistors are insensitive to pH changes in solution
Wangyang Fu, Cornelia Nef, Oren Knopfmacher +4
We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observa…
Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors
A. Tarasov, W. Fu, O. Knopfmacher +3
Recent studies on nanoscale field-effect sensors reveal the crucial importance of the low frequency noise for determining the ultimate detection limit. In this letter, the 1/f-type…