activity
20122020
most citedThree-dimensional imaging of beam-induced biasing of InP/GaInP tunnel diodes

8 citations · 19 across the 5 of their papers we have counts for

collaborators

5 papers

physics.app-ph2020★ 4 cited

Transmission Helium Ion Microscopy of Graphene

Karen L. Kavanagh, Aleksei Bunevich, Mallikarjuna Rao Motapothula

We compare transmission He ion microscopy (HIM) to transmission electron microscopy (TEM) of graphene support films. We present spot transmission patterns that compare with scatter…

physics.app-ph2020

Abrupt degenerately-doped silicon nanowire tunnel junctions

Cristina Cordoba, Taylor S. Teitsworth, Mingze Yang +2

We have confirmed the presence of narrow, degenerately-doped axial silicon nanowire (SiNW) - junctions via off-axis electron holography (EH). SiNWs were grown via the vapor-s…

physics.app-ph2019★ 8 cited

Three-dimensional imaging of beam-induced biasing of InP/GaInP tunnel diodes

Cristina Cordoba, Xulu Zeng, Daniel Wolf +4

Electron Holographic Tomography was used to obtain 3-dimensional reconstructions of the morphology and electrostatic potential gradient of axial GaInP/InP nanowire tunnel diodes. C…

cond-mat.mtrl-sci2019

A wet etching method for few-layer black phosphorus with an atomic accuracy and compatibility with major lithography techniques

Teren Liu, Tao Fang, Karen Kavanagh +2

This paper reports a few-layer black phosphorus thickness pattern fabricated by a top-down nanofabrication approach. This was achieved by a new wet etching process that can etch se…

cond-mat.mes-hall2012★ 7 cited

Lateral spin injection and detection through electrodeposited Fe/GaAs contacts

Sarmita Majumder, Bartek Kardasz, George Kirczenow +2

Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of fr…