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physics.app-ph2023★ 1 cited
Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure
Shijie Xu, Yan Huang, Farzad Mahfouzi +15
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consu…
physics.app-ph2019
Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture
Xueying Zhang, Wenlong Cai, Mengxing Wang +6
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing.…