activity
20192025
most citedPicosecond Switching of Optomagnetic Tunnel Junctions

61 citations · 73 across the 8 of their papers we have counts for

collaborators

9 papers

physics.app-ph2025

Ultralong Octupole Moment Switching Driven by Twin Topological Spin

Shijie Xu, Zhizhong Zhang, Yan Huang +10

Spintronics has emerged as a revolutionary frontier in the pursuit of faster, more energy-efficient, and technologically advanced electronics.

physics.app-ph2023★ 1 cited

Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure

Shijie Xu, Yan Huang, Farzad Mahfouzi +15

As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consu…

physics.app-ph2023★ 3 cited

Spin-flop magnetoresistance in a collinear antiferromagnetic tunnel junction

Shijie Xu, Zhizhong Zhang, Farzad Mahfouzi +14

Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the exte…

cond-mat.mtrl-sci2023

Giant orbit-to-charge conversion induced via the inverse orbital Hall effect

Renyou Xu, Hui Zhang, Yuhao Jiang +13

We investigate the orbit-to-charge conversion in YIG/Pt/nonmagnetic material (NM) trilayer heterostructures. With the additional Ru layer on the top of YIG/Pt stacks, the charge cu…

cond-mat.mes-hall2023

Orbitronics: Light-induced Orbit Currents in Terahertz Emission Experiments

Yong Xu, Fan Zhang, Albert Fert +6

Orbitronics is based on the use of orbit currents as information carriers. Up to now, orbit currents were created from the conversion of charge or spin currents, and inversely, the…

cond-mat.mes-hall2022★ 8 cited

Inverse Orbital Hall Effect Discovered from Light-Induced Terahertz Emission

Yong Xu, Fan Zhang, Yongshan Liu +5

Recent progress in orbitronics reveals the possibility of using orbit current as an information carrier. The interconversion between orbit currents and charge currents is crucial f…

cond-mat.mes-hall2020★ 61 cited

Picosecond Switching of Optomagnetic Tunnel Junctions

Luding Wang, Houyi Cheng, Pingzhi Li +7

Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolut…

cond-mat.mes-hall2020

Modulation of field-like spin orbit torque in heavy metal / ferromagnet heterostructure

Zilu Wang, Houyi Cheng, Kewen Shi +10

Recent studies rediscovered the crucial role of field-like spin orbit torque (SOT) in nanosecond-timescale SOT dynamics. However, there is not yet an effective way to control its r…

physics.app-ph2019

Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture

Xueying Zhang, Wenlong Cai, Mengxing Wang +6

Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing.…