84 citations · 124 across the 12 of their papers we have counts for
7 papers · 1 filter
Grain boundary defects induced Tc increment in MnSi
Adrian Benedit-Cardenas, Tobias Fox, Stéphanie Bruyère +6
The rapid advancement of digital technologies necessitates significant progress in functional materials, which are often derived from scarce elements and involve complex manufactur…
Nanoscale characterization of atomic positions in orthorhombic perovskite thin films
M. Martirosyan, S. Passuti, G. Masset +12
The crystal structure determines many of the physical properties of oxide perovskites (ABO) and only a tiny modification of the lattice structure causes major changes in the fu…
Growth orientation and magnetic properties of GdVO tailored by epitaxial strain engineering
M. Martirosyan, A. Gudima, J. Varignon +5
Transition-metal oxides with an ABO perovskite structure exhibit significant coupling between spin, orbital, and lattice degrees of freedom, highlighting the crucial role of la…
Large perpendicular magnetic anisotropy in Ta/CoFeB/MgO on full coverage monolayer MoS2 and first principle study of its electronic structure
Ziqi Zhou, Paul Marcon, Xavier Devaux +18
Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) w…
Temperature dependence of transport mechanisms in organic multiferroic tunnel junctions
Can Xiao, Huawei Sun, Luming Cheng +14
Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of me…
Room Temperature Spin to Charge Conversion in Amorphous Topological Insulating Gd-Alloyed BixSe1-x/CoFeB Bilayers
Protyush Sahu, Yifei Yang, Yihong Fan +12
Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TIs exotic transport properties and the advantage of mass production by sputter…
Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures
C. Cerqueira, J. Y. Qin, H. Dang +20
Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this…