86 citations · 183 across the 3 of their papers we have counts for
5 papers · 1 filter
Ab initio simulation of band-to-band tunneling FETs with single- and few-layer 2-D materials as channels
Áron Szabó Cedric Klinkert, Davide Campi, Christian Stieger +2
Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material…
2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope
Cedric Klinkert, Áron Szabó, Christian Stieger +3
Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However…
Electron transport through metal/MoS2 interfaces: edge- or area-dependent process?
Aron Szabo, Achint Jain, Markus Parzefall +2
In ultra-thin two-dimensional (2-D) materials, the formation of ohmic contacts with top metallic layers is a challenging task that involves different processes than in bulk-like st…
Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials
Christian Stieger, Aron Szabo, Teute Bunjaku +1
Through advanced quantum mechanical simulations combining electron and phonon transport from first-principles self-heating effects are investigated in n-type transistors with a sin…
Light from van der Waals quantum tunneling devices
Markus Parzefall, Áron Szabó, Takashi Taniguchi +3
The understanding of and control over light emission from quantum tunneling has challenged researchers for more than four decades due to the intricate interplay of electrical and o…