128 citations · 172 across the 7 of their papers we have counts for
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cond-mat.mes-hall2021★ 19 cited
High Mobility Free-Standing InSb Nanoflags Grown On InP Nanowire Stems For Quantum Devices
Isha Verma, Sedighe Salimian, Valentina Zannier +5
High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A wa…
cond-mat.mes-hall2021
Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions
Sedighe Salimian, Matteo Carrega, Isha Verma +5
High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in…