activity
20202025
most citedJosephson Diode Effect in High Mobility InSb Nanoflags

128 citations · 172 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.supr-con2025★ 1 cited

Supercurrent modulation in InSb nanoflag-based Josephson junctions by scanning gate microscopy

Antonio Lombardi, Gaurav Shukla, Giada Bucci +10

InSb nanoflags represent an interesting platform for quantum transport and have recently been exploited in the study of hybrid planar Josephson junctions. Due to the uncovered semi…

cond-mat.supr-con2024★ 2 cited

Side-gate modulation of supercurrent in InSb nanoflag-based Josephson junctions

Bianca Turini, Sedighe Salimian, Matteo Carrega +4

InSb nanoflags, due to their intrinsic spin-orbit interactions, are an interesting platform in the study of planar Josephson junctions. Ballistic transport, combined with high tran…

cond-mat.supr-con2023★ 21 cited

Half-integer Shapiro steps in highly transmissive InSb nanoflag Josephson junctions

Andrea Iorio, Alessandro Crippa, Bianca Turini +8

We investigate a ballistic InSb nanoflag-based Josephson junction with Nb superconducting contacts. The high transparency of the superconductor-semiconductor interfaces enables the…

cond-mat.supr-con2022★ 128 cited

Josephson Diode Effect in High Mobility InSb Nanoflags

Bianca Turini, Sedighe Salimian, Matteo Carrega +6

We report evidence of non-reciprocal dissipation-less transport in single ballistic InSb nanoflag Josephson junctions, owing to a strong spin-orbit coupling. Applying an in-plane m…

cond-mat.mes-hall2021★ 19 cited

High Mobility Free-Standing InSb Nanoflags Grown On InP Nanowire Stems For Quantum Devices

Isha Verma, Sedighe Salimian, Valentina Zannier +5

High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A wa…

cond-mat.mes-hall2021

Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions

Sedighe Salimian, Matteo Carrega, Isha Verma +5

High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in…

cond-mat.mes-hall2020★ 1 cited

Morphology and magneto-transport in exfoliated graphene on ultrathin crystalline \b{eta}-Si3N4(0001)/Si(111)

Sedighe Salimian, Shaohua Xiang, Stefano Colonna +6

We report the first experimental study of graphene transferred on \b{eta}-Si3N4(0001)/Si(111). Our work provides a comprehensive quantitative understanding of the physics of ultrat…