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cond-mat.mtrl-sci2020
Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1-xSrxSnO3 solid solution films
Hai Jun Cho, Koichi Sato, Mian Wei +2
La-doped ASnO3 (A = Ba, Sr) have great potential as advanced transparent oxide semiconductors due to their large optical bandgap and relatively high electron mobility. The bandgap…
cond-mat.mtrl-sci2018
Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO3
Anup V. Sanchela, Mian Wei, Joonhyuk Lee +6
Transparent oxide semiconductors (TOSs) showing both high visible transparency and high electron mobility have attracted great attention towards the realization of advanced optoele…
cond-mat.mtrl-sci2018
Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3
Anup V. Sanchela, Mian Wei, Haruki Zensyo +6
We report herein that the carrier mobility of the 2%-La-doped BaSnO3 (LBSO) films on (001) SrTiO3 and (001) MgO substrates strongly depends on the thickness whereas it is unrelated…