activity
20182020
most citedMeasurement of the Background Activities of a 100Mo-enriched powder sample for AMoRE crystal material using a single high purity germanium detector

4 citations · 4 across the 1 of their papers we have counts for

collaborators

6 papers

physics.ins-det2020

Measurement of the Background Activities of a 100Mo-enriched Powder Sample for an AMoRE Crystal Material by using Fourteen High-Purity Germanium Detectors

S. Y. Park, K. I. Hahn, W. G. Kang +6

The Advanced Molybdenum-based Rare process Experiment in its second phase (AMoRE-II) will search for neutrinoless double-beta (0ν\b{eta}\b{eta}) decay of 100Mo in 200 kg of molybda…

physics.ins-det20204 cited

Measurement of the Background Activities of a 100Mo-enriched powder sample for AMoRE crystal material using a single high purity germanium detector

Su-yeon Park, Insik Hahn, Woon Gu Kang +7

The Advanced Molybdenum-based Rare process Experiment (AMoRE) searches for neutrino-less double-beta (0ν\b{eta}\b{eta}) decay of 100Mo in enriched molybdate crystals. The AMoRE cry…

cond-mat.mtrl-sci2020

Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1-xSrxSnO3 solid solution films

Hai Jun Cho, Koichi Sato, Mian Wei +2

La-doped ASnO3 (A = Ba, Sr) have great potential as advanced transparent oxide semiconductors due to their large optical bandgap and relatively high electron mobility. The bandgap…

physics.app-ph2019

Increases of a Diamagnetic Property by Flux-Pinning in Volume Defect-Dominating Superconductors

H. B. Lee, G. C. Kim, Y. C. Kim +2

Whereas there are two critical fields that are H and H in the ideal type II superconductor, there is another critical field H defined as the field showing the…

cond-mat.mtrl-sci2018

Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO3

Anup V. Sanchela, Mian Wei, Joonhyuk Lee +6

Transparent oxide semiconductors (TOSs) showing both high visible transparency and high electron mobility have attracted great attention towards the realization of advanced optoele…

cond-mat.mtrl-sci2018

Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3

Anup V. Sanchela, Mian Wei, Haruki Zensyo +6

We report herein that the carrier mobility of the 2%-La-doped BaSnO3 (LBSO) films on (001) SrTiO3 and (001) MgO substrates strongly depends on the thickness whereas it is unrelated…